View 2N440307_4688077.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

unisonic technologies co., ltd 2n4403 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2005 unisonic technologies co., ltd qw-r201-053.d pnp general purpose amplifier ? description the utc 2n4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500ma. *pb-free plating product number: 2n4403l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing 2n4403-t92-b 2n4403l-t92-b to-92 e b c tape box 2n4403-t92-k 2n4403l-t92-k to-92 e b c bulk ? r{~ u?q jul 17.2007 ??m ?e utc doc.control center
2n4403 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r201-053.d ? absolute maximum ratings (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current-continuous i c -600 ma 625 mw total device dissipation derate above 25 p c 5.0 mw/
junction temperature t j +150
storage temperature t stg -55 ~ +150
note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. these are steady state limits. t he factory should be consulted on applications involving pulsed or low duty cycle operations. ? thermal data (ta=25 , unless otherwise specified) characteristic symbol ratings unit thermal resistance, junction to ambient ja 200
/w thermal resistance, junction to case jc 83.3
/w ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter breakdown voltage (note) bv ceo i c =-1ma, i b =0 -40 v collector-base breakdown voltage bv cbo ic=-0.1ma, i e =0 -40 v emitter-base breakdown voltage bv ebo i e =-0.1ma, i c =0 -5 v collector cut-off current i cex v ce =-35v, v eb =-0.4v -0.1 a base cut-off current i bex v ce =-35v, v be =-0.4v -0.1 a on characteristics* h fe1 v ce =-1v,i c =-0.1ma 30 h fe2 v ce =-1v,i c =-1ma 60 h fe3 v ce =-1v,i c =-10ma 100 h fe4 v ce =-2v, i c =-150ma (note) 100 300 dc current gain h fe5 v ce =-2v, i c =-500ma (note) 20 v ce(sat1) i c =-150ma, i b =-15ma -0.4 v collector-emitte r saturation voltage v ce(sat2 )i c =-500ma, i b =-50ma -0.75 v v be(sat1) i c =-150ma, i b =-15ma(note) -0.75 -0.95 v base-emitter satura tion voltage v be(sat2 )i c =-500ma, i b =-50ma -1.3 v small signal characteristics transition frequency f t v ce =-10v, i c =-20ma, f=100mhz 200 mhz collector-base capacitance ccb v cb =-10v, i e =0, f=140khz 8.5 pf emitter-base capacitance ceb v be =-0.5v, i c =0, f=140khz 30 pf input impedance h ie v ce =-10v, i c =-1ma, f=1khz 1.5 15 k ? voltage feedback ratio h re v ce =-10v, i c =-1ma, f=1khz 0.1 8 10 -4 small-signal current gain h fe v ce =-10v, i c =-1ma, f=1khz 60 500 output admittance h oe v ce =-10v, i c =-1ma, f=1khz 1.0 100 mbos switching characteristics delay time t d 15 ns rise time t r v cc =-30v, i c =-150ma i b1 =-15ma 20 ns storage time t s 225 ns fall time t f v cc =-30v, i c =-150ma i b1 = i b2 =-15ma 30 ns note: pulse test: pulse width 300 s, duty cycle 2% ? r{~ u?q jul 17.2007 ??m ?e utc doc.control center
2n4403 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r201-053.d ? test circuit 1k $ 50 $ 200 $ -30v -16v 0 figure 1. saturated turn-on switching timer ? 220ns 1k $ 50 $ 37 $ -6v figure 2. saturated turn-off switching timer 1.5v 1k note: bv ebo =5v ? 220ns -30v 0 ? r{~ u?q jul 17.2007 ??m ?e utc doc.control center
2n4403 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r201-053.d ? typical characteristics dc current gain, h fe collector-emitter voltage, v ce(sat) (v) base-emitter voltage, v be(sat) (v) base-emitter onvoltage, v be(on ) (v) ambient temperature, t a (
collector-cutoff current vs. ambient temperature c o l l e c t o r c u r r e n t , i c b o ( n a ) -100 -0.01 75 25 50 100 125 -10 -0.1 -1 v cb =-35v -0.1 -1 -10 -50 12 4 reverse bias voltage (v) input and output capacitance vs. reve rse bias voltage capacitance (pf) 8 16 20 cib cob 0 ? r{~ u?q jul 17.2007 ??m ?e utc doc.control center
2n4403 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r201-053.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. ? r{~ u?q jul 17.2007 ??m ?e utc doc.control center

▲Up To Search▲

Price & Availability of 2N440307

	To Download 2N440307 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .